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MOSFET MODULE
FCA50CC50
FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. 2 devices are serial connected with a fast recovery diode 100ns reverse connected across each MOSFET. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ID 50A, VDSS 500V Suitable for high speed switching applications. Low ON resistance. Wide Safe Operating Areas. trr 100ns fast recovery diode for free wheel. Applications UPS CVCF , Motor Control, Switching Power Supply, etc.
i u
UL;E76102 M
107.5 93 3 4 17
1 2 3
TAB 110 30max 31max
NAME PLATE
q
w
e
y t
Unit A
Maximum Ratings
Symbol VDSS VGSS ID IDP -ID PT Tj Tstg VISO Item Drain-Source Voltage Gate-Source Voltage Drain Current Source Current Total Power Dissipation Channel Temperature Storage Temperature Isolation Voltage R.M.S. Mounting Torque Mass Mounting M6 Terminal M5 A.C. 1minute Recommended Value 2.5-3.9 25-40 Recommended Value 1.5-2.5 15-25 Typical Value Tc 25 DC Pulse Duty 55% Conditions
Tj
25 Ratings FCA50CC50 500 20 50 100 50 330 40 40 2500 4.7 48 2.7 28 240 150 125 V Nm kgf B g Unit V V A A W
Electrical Charactistics
Symbol IGSS IDSS V BR VGS RDS VDS
DSS th on on
Tj 25 Conditions VGS 20V VDS 0V 500 1.0 5.0 140 3.5 30 10000 1900 750 60 VDD 300V VGS 15V ID 25A RG 5 IS 25A VGS 0V IS 25A VGS MOSFET Diode 5V di/dt 100A/ s 80 100 520 140 2.0 100 0.38 1.67 V ns /W ns Ratings Min. Typ. Max. 1.0 1.0 Unit A mA V V m V S pF pF pF
Item Gate Leakage Current Zero Gate Voltage Drain Current Darin-Source Breakdown Voltage Gate-Source Threshold Voltage Drain-Source On-State Resistance Drain-Source On-State Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Switching Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Thermal Resistance
VGS 0V VDS 500V VGS 0V ID 1mA VDS VGS ID 10mA ID 25A VGS 15V ID 25A VGS 15V VDS 10V ID 25A VGS 0V VDS 25V f 1.0MHz VGS 0V VDS 25V f 1.0MHz VGS 0V VDS 25V f 1.0MHz
gfs Ciss Coss Crss td on tr td off tf VSDS trr Rth j-c 1
4
35
FCA50CC50
2
FCA50CC50
3
MOSFET MODULE
FCA75CC50
FCA75CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. 2 devices are serial connected with a fast recovery diode 100ns reverse connected across each MOSFET. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ID 75A, VDSS 500V Suitable for high speed switching applications. Low ON resistance. Wide Safe Operating Areas. trr 100ns fast recovery diode for free wheel. Applications UPS CVCF , Motor Control, Switching Power Supply, etc.
i u
UL;E76102 M
107.5 93 3 4 17
1 2 3
TAB 110 30max 31max
NAME PLATE
q
w
e
y t
Unit A
Maximum Ratings
Symbol VDSS VGSS ID IDP -ID PT Tj Tstg VISO Item Drain-Source Voltage Gate-Source Voltage Drain Current Source Current Total Power Dissipation Channel Temperature Storage Temperature Isolation Voltage R.M.S. Mounting Torque Mass Mounting M6 Terminal M5 A.C. 1minute Recommended Value 2.5-3.9 25-40 Recommended Value 1.5-2.5 15-25 Typical Value Tc 25 DC Pulse Duty 35% Conditions
Tj
25 Ratings FCA75CC50 500 20 75 150 75 430 40 40 2500 4.7 48 2.7 28 240 150 125 V Nm kgf B g Tj 25 Unit V V A A W
Electrical Characteristics
Symbol IGSS IDSS V BR VGS RDS VDS
DSS th on on
Item Gate Leakage Current Zero Gate Voltage Drain Current Darin-Source Breakdown Voltage Gate-Source Threshold Voltage Drain-Source On-State Resistance Drain-Source On-State Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Switching Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Thermal Resistance VGS
Conditions 20V VDS 0V
Ratings Min. Typ. Max. 1.0 1.0 500 1.0 5.0 110 4.4 40 13500 2500 1000 70 140 700 210 2.5 80 100 0.29 1.67
Unit A mA V V m V S pF pF pF
VGS 0V VDS 500V VGS 0V ID 1mA VDS VGS ID 10mA ID 40A VGS 15V ID 40A VGS 15V VDS 10V ID 40A VGS 0V VDS 25V f 1.0MHz VGS 0V VDS 25V f 1.0MHz VGS 0V VDS 25V f 1.0MHz VDD 300V VGS 15V ID 40A RG 5 IS 40A VGS 0V IS 40A VGS MOSFET Diode 5V di/dt 100A/ s
gfs Ciss Coss Crss td on tr td off tf VSDS trr Rth j-c
ns
ns /W 4
4
V
35
FCA75CC50
5
FCA75CC50
6
MOSFET MODULE
FBA50CA45/50
FBA50CA45/50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. 2 devices are serial connected. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ID 50A, VDSS 500V Suitable for high speed switching applications. Low ON resistance. Wide Safe Operating Areas. Applications UPS CVCF , Motor Control, Switching Power Supply, etc.
30max
i u
UL;E76102 M
107.5 0.6 93 0.3 4 M5 4 17 4 35 0.6
1 2 3 4
78
2 6.5
19
19
19 TAB 110
56
NAME PLATE
q
we
r
y t
Unit A
Maximum Ratings
Symbol VDSS VGSS ID IDP -ID PT Tj Tstg VISO Item Drain-Source Voltage Gate-Source Voltage Drain Current Source Current Total Power Dissipation Channel Temperature Storage Temperature Isolation Voltage R.M.S. Mounting Torque Mass Mounting M6 Terminal M5 A.C. 1minute Recommended Value 2.5-3.9 25-40 Recommended Value 1.5-2.5 15-25 Typical Value Tc 25 D.C. Pulse Conditions
Tj
25 Ratings FBA50CA45 FBA50CA50 450 20 50 100 50 320 150 40 2500 4.7 48 2.7 28 220 125 V Nm kgf B g 500 Unit V V A A W
Electrical Characteristics
Symbol IGSS IDSS V BR VGS RDS VDS
DSS th on on
Tj 25 Conditions VGS 20V VDS 0V 450 500 1.0 5.0 120 3.0 30 10000 1900 750 60 RL 12 RGS 50 ID 25A RG 5 ID 25A VGS 0V ID 25A VGS 0V di/dt 100A/ s 700 0.39 VGS 15V 60 650 130 1.5 V ns /W ns Ratings Min. Typ. Max. 1.0 1.0 Unit A mA V V m V S pF pF pF
Item Gate Leakage Current Zero Gate Voltage Drain Current FBA50CA45 Drain-Source Breakdown Voltage FBA50CA50 Gate-Source Threshold Voltage Drain-Source On-State Resistance Drain-Source On-State Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Switching Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Thermal Resistance
VGS 0V VDS 500V VGS 0V ID 1mA VDS VGS ID 10mA ID 25A VGS 15V ID 25A VGS 15V VDS 10V ID 25A VGS 0V VDS 25V f 1.0MHz VGS 0V VDS 25V f 1.0MHz VGS 0V VDS 25V f 1.0MHz
gfs Ciss Coss Crss td on tr td off tf VSDS trr Rth j-c 7
31max
FBA50CA45/50
8
FBA50CA45/50
9
MOSFET MODULE
FBA75CA45/50
FBA75CA45/50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. 2 devices are serial connected. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ID 75A, VDSS 500V Suitable for high speed switching applications. Low ON resistance. Wide Safe Operating Areas. Applications UPS CVCF , Motor Control, Switching Power Supply, etc.
30max
i u
UL;E76102 M
107.5 0.6 93 0.3 4 M5 4 17 4 35 0.6
1 2 3 4
78
2 6.5
19
19
19 TAB 110
56
NAME PLATE
q
we
r
y t
Unit A
Maximum Ratings
Symbol VDSS VGSS ID IDP -ID PT Tj Tstg VISO Item Drain-Source Voltage Gate-Source Voltage Drain Current Source Current Total Power Dissipation Channel Temperature Storage Temperature Isolation Voltage R.M.S. Mounting Torque Mass Mounting M6 Terminal M5 A.C. 1minute Recommended Value 2.5-3.9 25-40 Recommended Value 1.5-2.5 15-25 Typical Value Tc 25 D.C. Pulse Duty 36% Conditions
Tj
25 Ratings FBA75CA45 FBA75CA50 450 20 75 150 75 400 150 40 2500 4.7 48 2.7 28 220 125 V Nm kgf B g 500 Unit V V A A W
Electrical Characteristics
Symbol IGSS IDSS V BR VGS RDS VDS
DSS th on on
Tj 25 Conditions VGS 20V VDS 0V 450 500 1.0 5.0 0.10 4.0 40 13500 2500 1000 60 RL 7.5 RGS 50 ID 40A RG 5 ID 40A VGS 0V ID 40A VGS 0V di/dt 100A/ s 700 0.31 VGS 15V 120 700 210 1.5 V ns /W 10 ns V S pF pF pF Ratings Min. Typ. Max. 1.0 1.0 Unit A mA V V
Item Gate Leakage Current Zero Gate Voltage Drain Current FBA75CA45 Drain-Source Breakdown Voltage FBA75CA50 Gate-Source Threshold Voltage Drain-Source On-State Resistance Drain-Source On-State Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Switching Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Thermal Resistance
VGS 0V VDS 500V VGS 0V ID 1mA VDS VGS ID 10mA ID 40A VGS 15V ID 40A VGS 15V VDS 10V VD 40A VGS 0V VDS 25V f 1.0MHz VGS 0V VDS 25V f 1.0MHz VGS 0V VDS 25V f 1.0MHz
gfs Ciss Coss Crss td on tr td off tf VSDS trr Rth j-c
31max
FBA75CA45/50
11
FBA75CA45/50
12
MOSFET MODULE
SF100BA50
SF100BA50 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ID 100A, VDSS 500V Suitable for high speed switching applications. Low ON resistance. Wide Safe Operating Areas. trr 700ns Applications UPS CVCF , Motor Control, Switching Power Supply, etc. UL;E76102 M
80.5 52.5 2-M5
3
1 2
4
34.0 65.0
w
NAME PLATE
q
Unit A
Maximum Ratings
Symbol VDSS VGSS ID IDP -ID PT Tj Tstg VISO Item Drain-Source Voltage Gate-Source Voltage Drain Current Source Current Total Power Dissipation Channel Temperature Storage Temperature Isolation Voltage R.M.S. Mounting Torque Mass Mounting M6 Terminal M5 A.C. 1minute Recommended Value 2.5 3.9 Recommended Value 1.5 2.5 Typical Value 25 40 15 25 Tc 25 DC Pulse Duty 43% Conditions
Tj
25 Ratings SF100BA50 500 20 100 200 100 600 40 40 2500 4.7 48 2.7 28 160 150 125 V Nm kgf B g Unit V V A A W
Electrical Characteristics
Symbol IGSS IDSS V BR VGS RDS VDS
DSS th on on
Tj 25 Conditions VGS 20V VDS 0V 500 1.0 5.0 70 3.5 60 20000 3800 1500 70 RL 6 RGS 50 ID 50A RG 5 ID 50A VGS 0V ID 50A VGS 0V di/dt 100A/ s 700 0.21 VGS 15V 120 1100 280 1.5 V ns /W s Ratings Min. Typ. Max. 2.0 1.0 Unit A mA V V m V S pF pF pF
Item Gate Leakage Current Zero Gate Voltage Drain Current Darin-Source Breakdown Voltage Gate-Source Threshold Voltage Drain-Source On-State Resistance Drain-Source On-State Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Switching Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Thermal Resistance
VGS 0V VDS 500V VGS 0V ID 1mA VDS VGS ID 10mA ID 50A VGS 15V ID 50A VGS 15V VDS 10A ID 50A VGS 0V VDS 25V f 1.0MHz VGS 0V VDS 25V f 1.0MHz VGS 0V VDS 25V f 1.0MHz
gfs Ciss Coss Crss td on tr td off tf VSDS trr Rth j-c
13
SF100BA50
14
SF100BA50
15
MOSFET MODULE
SF150BA50
SF150BA50 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ID 150A, VDSS 500V Suitable for high speed switching application. Low ON resistance. Wide Safe Operating Areas. Applications UPS CVCF , Motor Control, Switching Power Supply, etc.
w
UL;E76102 M
80.5 52.5 2-M5
3
1 2
4
34.0 65.0
NAME PLATE
q
Unit A
Maximum Ratings
Symbol VDSS VGSS ID IDP -ID PT Tj Tstg VISO Item Drain-Source Voltage Gate-Source Voltage Drain Current Source Current Total Power Dissipation Channel Temperature Storage Temperature Isolation Voltage R.M.S. Mounting Torque Mass Mounting M6 Terminal M5 A.C. 1minute Recommended Value 2.5-3.9 25-40 Recommended Value 1.5-2.5 15-25 Typical Value Tc 25 DC Pulse Duty 35% Conditions
Tj
25 Ratings SF150BA50 500 20 150 300 150 780 40 40 2500 4.7 48 2.7 28 160 150 125 V Nm kgf B g Unit V V A A W
Electrical Characteristics
Symbol IGSS IDSS V BR VGS RDS VDS
DSS th on on
Tj 25 Conditions VGS 20V VDS 0V 500 1.0 5.0 50 3.75 80 27000 5000 2000 90 RL 4 RGS 50 ID 75A RG 5 ID 75A VGS 0V ID 75A VGS 0V di/dt 100A/ s 700 0.16 VGS 15V 180 1400 360 1.5 V ns /W ns Ratings Min. Typ. Max. 2.0 2.0 Unit A mA V V m V S pF pF pF
Item Gate Leakage Current Zero Gate Voltage Drain Current Darin-Source Breakdown Voltage Gate-Source Threshold Voltage Drain-Source On-State Resistance Drain-Source On-State Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Switching Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Thermal Resistance
VGS 0V VDS 500V VGS 0V ID 1mA VDS VGS ID 10mA ID 75A VGS 15V ID 75A VGS 15V VDS 10V ID 75A VGS 0V VDS 25V f 1.0MHz VGS 0V VDS 25V f 1.0MHz VGS 0V VDS 25V f 1.0MHz
gfs Ciss Coss Crss td on tr td off tf VSDS trr Rth j-c
16
SF150BA50
17
SF150BA50
18
MOSFET MODULE
SF100CB100
SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current with a fast recovery diode trr reverse connected. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ID 100A, VDSS 1000V Suitable for high speed switching applications. Low ON resistance. Wide Safe Operating Areas. trr 300ns fast recovery diode for free wheel Applications UL;E76102 M
Unit A
Maximum Ratings
Symbol VDSS VGSS ID IDP -ID PT Tj Tstg VISO Item Drain-Source Voltage Gate-Source Voltage Drain Current Source Current Total Power Dissipation Channel Temperature Storage Temperature Isolation Voltage R.M.S. Mounting M6 Mounting Torque Mass Terminal M6 Terminal M4 A.C. 1minute Recommended Value 2.5-3.9 25-40 Recommended Value 2.5-3.9 25-40 Recommended Value 1.0-1.4 10-14 Typical Value Tc 25 DC Pulse Conditions
Tj
25 Ratings SF100CB100 1000 30 100 200 100 800 40 40 2500 4.7 48 4.7 48 1.5 15 460 g Nm kgf B 150 125 V Unit V V A A W
Electrical Characteristics
Symbol IGSS IDSS V BR VGS RDS VDS
DSS th on on
Tj 25 Conditions VGS 20V VDS 0V 1000 1.5 3.5 150 15 30 50 16000 2900 1800 19200 4200 2600 150 RL 6 VGS 15V/ 5V ID 100A RG 2.2 ID 100A VGS 0V ID 100A VGS 15V di/dt 400A/ s MOSFET Diode 300 600 300 1.8 300 0.16 0.64 V ns /W 19 ns Ratings Min. Typ. Max. 0.1 4.0 Unit A mA V V m V S pF pF pF
Item Gate Leakage Current Zero Gate Voltage Drain Current Darin-Source Breakdown Voltage Gate-Source Threshold Voltage Drain-Source On-State Resistance Drain-Source On-State Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Switching Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Thermal Resistance
VGS 0V VDS 800V VGS 0V ID 1mA VDS VGS ID 10mA ID 100A VGS 15V ID 100A VGS 15V VDS 10A VD 75A VGS 0V VDS 25V f 1.0MHz VGS 0V VDS 25V f 1.0MHz VGS 0V VDS 25V f 1.0MHz
gfs Ciss Coss Crss td on tr td off tf VSDS trr Rth j-c
SF100CB100
Ciss
Coss
Crss
20
SF100CB100
21

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